Electrical and optical properties of tellurium-doped gallium antimonide grown by MOVPE

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Scientific › peer-review

Original language	English
Title of host publication	NATO Advanced Science Institutes Series. Series 3. High Technology
Pages	27-40
Volume	11
Publication status	Published - 1996
MoE publication type	A3 Book section, Chapters in research books

Keywords

@inbook{7e6c734c47ab4067864e6cecc0dcb0ec,

title = "Electrical and optical properties of tellurium-doped gallium antimonide grown by MOVPE",

keywords = "optoelectronics, semiconductors, optoelectronics, semiconductors, optoelectronics, semiconductors",

author = "K. Hjelt and T. Tuomi",

year = "1996",

language = "English",

volume = "11",

pages = "27--40",

booktitle = "NATO Advanced Science Institutes Series. Series 3. High Technology",

}

TY - CHAP

T1 - Electrical and optical properties of tellurium-doped gallium antimonide grown by MOVPE

AU - Hjelt, K.

AU - Tuomi, T.

PY - 1996

Y1 - 1996

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

M3 - Chapter

VL - 11

SP - 27

EP - 40

BT - NATO Advanced Science Institutes Series. Series 3. High Technology

ER -