Electrical and optical properties of tellurium-doped gallium antimonide grown by MOVPE

K. Hjelt, T. Tuomi

    Research output: Chapter in Book/Report/Conference proceedingChapterScientificpeer-review

    Original languageEnglish
    Title of host publicationNATO Advanced Science Institutes Series. Series 3. High Technology
    Pages27-40
    Volume11
    Publication statusPublished - 1996
    MoE publication typeA3 Part of a book or another research book

    Keywords

    • optoelectronics
    • semiconductors

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