Electrical and optical properties of Te-doped GaSb grown by MOCVD.

K. Hjelt

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationSmolenice, Slovakia
    Pagess.
    Publication statusPublished - 1995
    MoE publication typeD4 Published development or research report or study

    Keywords

    • gallium antimonide, metalorganic vapour phase epitaxy

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