Elastic-plastic transition in MBE-Grown GaSb semiconducting crystal examined by nanoindentation

A. Majtyka; M. Trebala; A. Tukiainen; D. Chrobak; Wladyslaw Borgiel; J. Räisänen; R. Nowak

doi:10.12693/APhysPolA.130.1131

Elastic-plastic transition in MBE-Grown GaSb semiconducting crystal examined by nanoindentation

A. Majtyka^*, M. Trebala, A. Tukiainen, D. Chrobak, Wladyslaw Borgiel, J. Räisänen, R. Nowak

^*Corresponding author for this work

Department of Chemistry and Materials Science

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E = 83.07 ± 1.78 GPa), hardness (H = 5.19 ± 0.25 GPa) and "true hardness" (H_T = 5.73 ± 0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σ_Y = 3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.

Original language	English
Pages (from-to)	1131-1133
Number of pages	3
Journal	Acta Physica Polonica A
Volume	130
Issue number	4
DOIs	https://doi.org/10.12693/APhysPolA.130.1131
Publication status	Published - 1 Oct 2016
MoE publication type	A1 Journal article-refereed

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abstract = "The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E = 83.07 ± 1.78 GPa), hardness (H = 5.19 ± 0.25 GPa) and {"}true hardness{"} (HT = 5.73 ± 0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σY = 3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.",

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AU - Majtyka, A.

AU - Trebala, M.

AU - Tukiainen, A.

AU - Chrobak, D.

AU - Borgiel, Wladyslaw

AU - Räisänen, J.

AU - Nowak, R.

PY - 2016/10/1

Y1 - 2016/10/1

N2 - The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E = 83.07 ± 1.78 GPa), hardness (H = 5.19 ± 0.25 GPa) and "true hardness" (HT = 5.73 ± 0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σY = 3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.

AB - The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E = 83.07 ± 1.78 GPa), hardness (H = 5.19 ± 0.25 GPa) and "true hardness" (HT = 5.73 ± 0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σY = 3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.

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Elastic-plastic transition in MBE-Grown GaSb semiconducting crystal examined by nanoindentation

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