Elastic-plastic transition in MBE-Grown GaSb semiconducting crystal examined by nanoindentation

A. Majtyka*, M. Trebala, A. Tukiainen, D. Chrobak, Wladyslaw Borgiel, J. Räisänen, R. Nowak

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)


The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E = 83.07 ± 1.78 GPa), hardness (H = 5.19 ± 0.25 GPa) and "true hardness" (HT = 5.73 ± 0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σY = 3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.

Original languageEnglish
Pages (from-to)1131-1133
Number of pages3
JournalActa Physica Polonica A
Issue number4
Publication statusPublished - 1 Oct 2016
MoE publication typeA1 Journal article-refereed

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