Efficient terahertz generation by ordered arrays of GaAs nanowires

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


  • V. N. Trukhin
  • A. D. Bouravleuv
  • I. A. Mustafin
  • V. V. Rumyantsev
  • S. V. Morozov
  • D. I. Kuritsyn
  • G. E. Cirlin
  • J. P. Kakko
  • Teppo Huhtio

  • Harri Lipsanen

Research units

  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • St. Petersburg Academic University
  • RAS - Ioffe Physico Technical Institute
  • Institute for Physics of Microstructures, Russian Academy of Sciences


THz generation under the excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz radiation generation increases due to the resonant leaky mode excitation in nanowires. The THz generation mechanisms have been identified. It is shown that the efficiency of the terahertz generation at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs, which is the most effective THz emitter.


Original languageEnglish
Title of host publication41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
Publication statusPublished - 28 Nov 2016
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Infrared, Millimeter and Terahertz Waves - Copenhagen, Denmark
Duration: 25 Sep 201630 Sep 2016
Conference number: 41

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035


ConferenceInternational Conference on Infrared, Millimeter and Terahertz Waves
Abbreviated titleIRMMW-THz

ID: 10713585