Efficient surface passivation of black silicon using spatial atomic layer deposition

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Abstract

Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.
Original languageEnglish
Title of host publication7th International Conference on Silicon Photovoltaics, SiliconPV 2017
PublisherElsevier
Pages282–287
Number of pages6
DOIs
Publication statusPublished - 21 Sep 2017
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Crystalline Silicon Photovoltaics - Freiburg, Germany, Freiburg, Germany
Duration: 3 Apr 20175 Apr 2017
Conference number: 7
http://siliconpv.com/home.html

Publication series

NameEnergy Procedia
PublisherElsevier
Volume124
ISSN (Electronic)1876-6102

Conference

ConferenceInternational Conference on Crystalline Silicon Photovoltaics
Abbreviated titleSiliconPV 2017
CountryGermany
CityFreiburg
Period03/04/201705/04/2017
Internet address

Keywords

  • spatial atomic layer deposition
  • nanostructured silicon
  • high surface area
  • surface passivation
  • conformal coating
  • aluminum oxide

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    OtaNano

    Anna Rissanen (Manager)

    Aalto University

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  • Cite this

    Heikkinen, I., Repo, P., Vähänissi, V., Pasanen, T., Malinen, V., & Savin, H. (2017). Efficient surface passivation of black silicon using spatial atomic layer deposition. In 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 (pp. 282–287). (Energy Procedia; Vol. 124). Elsevier. https://doi.org/10.1016/j.egypro.2017.09.300