Efficient surface passivation of black silicon using spatial atomic layer deposition

Ismo Heikkinen; Päivikki Repo; Ville Vähänissi; Toni Pasanen; Ville Malinen; Hele Savin

doi:10.1016/j.egypro.2017.09.300

Efficient surface passivation of black silicon using spatial atomic layer deposition

Ismo Heikkinen, Päivikki Repo, Ville Vähänissi, Toni Pasanen, Ville Malinen, Hele Savin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

5 Citations (Scopus)

254 Downloads (Pure)

Abstract

Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.

Original language	English
Title of host publication	7th International Conference on Silicon Photovoltaics, SiliconPV 2017
Publisher	Elsevier
Pages	282–287
Number of pages	6
DOIs	https://doi.org/10.1016/j.egypro.2017.09.300
Publication status	Published - 21 Sep 2017
MoE publication type	A4 Article in a conference publication
Event	International Conference on Crystalline Silicon Photovoltaics - Freiburg, Germany, Freiburg, Germany Duration: 3 Apr 2017 → 5 Apr 2017 Conference number: 7 http://siliconpv.com/home.html

Publication series

Name	Energy Procedia
Publisher	Elsevier
Volume	124
ISSN (Electronic)	1876-6102

Conference

Conference	International Conference on Crystalline Silicon Photovoltaics
Abbreviated title	SiliconPV 2017
Country	Germany
City	Freiburg
Period	03/04/2017 → 05/04/2017
Internet address	http://siliconpv.com/home.html

Keywords

spatial atomic layer deposition
nanostructured silicon
high surface area
surface passivation
conformal coating
aluminum oxide

Access to Document

10.1016/j.egypro.2017.09.300Licence: CC BY-NC-ND

1-s2.0-S1876610217342716-main
© 2017 The Authors. Published by Elsevier Ltd.
Final published version, 902 KBLicence: CC BY-NC-ND

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Equipment

OtaNano

Anna Rissanen (Manager)

Aalto University

Facility/equipment: Facility

OtaNano - Nanofab

Päivikki Repo (Manager)

School of Electrical Engineering

Facility/equipment: Facility

Cite this

Heikkinen, I., Repo, P., Vähänissi, V., Pasanen, T., Malinen, V., & Savin, H. (2017). Efficient surface passivation of black silicon using spatial atomic layer deposition. In 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 (pp. 282–287). (Energy Procedia; Vol. 124). Elsevier. https://doi.org/10.1016/j.egypro.2017.09.300

@inproceedings{8e95c529a001469aa18a875424f415f0,

title = "Efficient surface passivation of black silicon using spatial atomic layer deposition",

abstract = "Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.",

keywords = "spatial atomic layer deposition, nanostructured silicon, high surface area, surface passivation, conformal coating, aluminum oxide",

author = "Ismo Heikkinen and P{\"a}ivikki Repo and Ville V{\"a}h{\"a}nissi and Toni Pasanen and Ville Malinen and Hele Savin",

year = "2017",

month = "9",

day = "21",

doi = "10.1016/j.egypro.2017.09.300",

language = "English",

series = "Energy Procedia",

publisher = "Elsevier",

pages = "282–287",

booktitle = "7th International Conference on Silicon Photovoltaics, SiliconPV 2017",

address = "Netherlands",

}

Heikkinen, I , Repo, P , Vähänissi, V , Pasanen, T, Malinen, V & Savin, H 2017, Efficient surface passivation of black silicon using spatial atomic layer deposition. in 7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Energy Procedia, vol. 124, Elsevier, pp. 282–287, International Conference on Crystalline Silicon Photovoltaics, Freiburg, Germany, 03/04/2017. https://doi.org/10.1016/j.egypro.2017.09.300

Efficient surface passivation of black silicon using spatial atomic layer deposition. / Heikkinen, Ismo ; Repo, Päivikki ; Vähänissi, Ville ; Pasanen, Toni; Malinen, Ville; Savin, Hele.

7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Elsevier, 2017. p. 282–287 (Energy Procedia; Vol. 124).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Efficient surface passivation of black silicon using spatial atomic layer deposition

AU - Heikkinen, Ismo

AU - Repo, Päivikki

AU - Vähänissi, Ville

AU - Pasanen, Toni

AU - Malinen, Ville

AU - Savin, Hele

PY - 2017/9/21

Y1 - 2017/9/21

N2 - Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.

AB - Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.

KW - spatial atomic layer deposition

KW - nanostructured silicon

KW - high surface area

KW - surface passivation

KW - conformal coating

KW - aluminum oxide

U2 - 10.1016/j.egypro.2017.09.300

DO - 10.1016/j.egypro.2017.09.300

M3 - Conference contribution

T3 - Energy Procedia

SP - 282

EP - 287

BT - 7th International Conference on Silicon Photovoltaics, SiliconPV 2017

PB - Elsevier

ER -