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Abstract
Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.
Original language | English |
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Title of host publication | 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 |
Publisher | Elsevier |
Pages | 282–287 |
Number of pages | 6 |
Volume | 124 |
DOIs | |
Publication status | Published - 21 Sept 2017 |
MoE publication type | A4 Conference publication |
Event | International Conference on Crystalline Silicon Photovoltaics - Freiburg, Germany, Freiburg, Germany Duration: 3 Apr 2017 → 5 Apr 2017 Conference number: 7 http://siliconpv.com/home.html |
Publication series
Name | Energy Procedia |
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Publisher | Elsevier BV |
ISSN (Print) | 1876-6102 |
Conference
Conference | International Conference on Crystalline Silicon Photovoltaics |
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Abbreviated title | SiliconPV 2017 |
Country/Territory | Germany |
City | Freiburg |
Period | 03/04/2017 → 05/04/2017 |
Internet address |
Keywords
- spatial atomic layer deposition
- nanostructured silicon
- high surface area
- surface passivation
- conformal coating
- aluminum oxide
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Dive into the research topics of 'Efficient surface passivation of black silicon using spatial atomic layer deposition'. Together they form a unique fingerprint.Projects
- 1 Finished
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Black silicon and defect engineering for highly efficient solar cells and modules, BLACK
Savin, H. (Principal investigator)
01/03/2015 → 28/02/2018
Project: Business Finland: Other research funding