Abstract
Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.
Original language | English |
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Pages (from-to) | 282–287 |
Number of pages | 6 |
Journal | Energy Procedia |
Volume | 124 |
DOIs | |
Publication status | Published - 21 Sept 2017 |
MoE publication type | A4 Article in a conference publication |
Event | International Conference on Crystalline Silicon Photovoltaics - Freiburg, Germany, Freiburg, Germany Duration: 3 Apr 2017 → 5 Apr 2017 Conference number: 7 http://siliconpv.com/home.html |
Keywords
- spatial atomic layer deposition
- nanostructured silicon
- high surface area
- surface passivation
- conformal coating
- aluminum oxide