Efficient surface passivation of black silicon using spatial atomic layer deposition

Ismo Heikkinen; Päivikki Repo; Ville Vähänissi; Toni Pasanen; Ville Malinen; Hele Savin

doi:10.1016/j.egypro.2017.09.300

Efficient surface passivation of black silicon using spatial atomic layer deposition

Ismo Heikkinen, Päivikki Repo, Ville Vähänissi, Toni Pasanen, Ville Malinen, Hele Savin

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Abstract

Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.

Original language	English
Pages (from-to)	282–287
Number of pages	6
Journal	Energy Procedia
Volume	124
DOIs	https://doi.org/10.1016/j.egypro.2017.09.300
Publication status	Published - 21 Sep 2017
MoE publication type	A4 Article in a conference publication
Event	International Conference on Crystalline Silicon Photovoltaics - Freiburg, Germany, Freiburg, Germany Duration: 3 Apr 2017 → 5 Apr 2017 Conference number: 7 http://siliconpv.com/home.html

Keywords

spatial atomic layer deposition
nanostructured silicon
high surface area
surface passivation
conformal coating
aluminum oxide

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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abstract = "Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.",

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AU - Heikkinen, Ismo

AU - Repo, Päivikki

AU - Vähänissi, Ville

AU - Pasanen, Toni

AU - Malinen, Ville

AU - Savin, Hele

N1 - Conference code: 7

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N2 - Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.

AB - Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates.

KW - spatial atomic layer deposition

KW - nanostructured silicon

KW - high surface area

KW - surface passivation

KW - conformal coating

KW - aluminum oxide

U2 - 10.1016/j.egypro.2017.09.300

DO - 10.1016/j.egypro.2017.09.300

M3 - Conference article

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JO - Energy Procedia

JF - Energy Procedia

SN - 1876-6102

T2 - International Conference on Crystalline Silicon Photovoltaics

Y2 - 3 April 2017 through 5 April 2017

ER -

Efficient surface passivation of black silicon using spatial atomic layer deposition

Abstract

Keywords

UN SDGs

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