Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling

A. M. Savin; M. Prunnila; P. P. Kivinen; J. P. Pekola; J. Ahopelto; A. J. Manninen

doi:10.1063/1.1399313

Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling

A. M. Savin^*, M. Prunnila, P. P. Kivinen, J. P. Pekola, J. Ahopelto, A. J. Manninen

^*Corresponding author for this work

Not published at Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor-semiconductor-superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron-phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.

Original language	English
Pages (from-to)	1471-1473
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	10
DOIs	https://doi.org/10.1063/1.1399313
Publication status	Published - 2001
MoE publication type	A1 Journal article-refereed

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AU - Ahopelto, J.

AU - Manninen, A. J.

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AB - Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor-semiconductor-superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron-phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.

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Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling

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