Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling

A. M. Savin*, M. Prunnila, P. P. Kivinen, J. P. Pekola, J. Ahopelto, A. J. Manninen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

48 Citations (Scopus)

Abstract

Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor-semiconductor-superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron-phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.

Original languageEnglish
Pages (from-to)1471-1473
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number10
DOIs
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

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