Abstract
This study presents the performance comparison of two scenarios to obtain high voltage gain. A high step-up converter (HSU) and a cascaded boost converter are chosen for this study. For analytical analysis, a loss model for both converters is developed on MATLAB. Gallium nitride- based prototypes of HSU and cascade boost converter provided the validation of the analytical analysis. Based on the theoretical evaluation and practical tests, efficiencies of both converters are expressed in terms of their voltage gain to find the optimal point of operation. Results showed that the cascaded boost converter is more efficient than the HSU converter at higher voltage gain values. However, the HSU converter has a higher energy density and lower switch voltage stress than those of the cascaded boost converter.
| Original language | English |
|---|---|
| Pages (from-to) | 4167-4172 |
| Number of pages | 6 |
| Journal | The Journal of Engineering |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - Jun 2019 |
| MoE publication type | A1 Journal article-refereed |
| Event | IET International Conference on Power Electronics, Machines and Drives - Liverpool, United Kingdom Duration: 17 Apr 2018 → 19 Apr 2018 Conference number: 9 |
Keywords
- Power convertors
- Gallium compounds
- Optimisation
- Wide band gap semiconductors
- III-V semiconductors
- GaN
- Voltage stress
- MATLAB
- Interleaved high step-up converter
- Efficiency optimisation
- Cascaded boost converter
- HSU converter