Effects of Zn doping on GaAs nanowires

T. Haggren*, J. P. Kakko, H. Jiang, V. Dhaka, T. Huhtio, H. Lipsanen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

7 Citations (Scopus)

Abstract

Knowledge on doping effects is essential for fabrication of nanowire devices. While high doping levels may be required, nanowire growth can fail when doping is increased exceedingly. We report effects of Zn doping on different properties of GaAs nanowires, such as morphology, optical properties and growth rate. Nanowires with lower doping showed better and more consistent morphology while highly doped nanowires suffered from frequent crystal defects and a kinked structure. Additionally, doping increased the growth rate. Optical properties were surprisingly enhanced, which was seen as significantly higher photoluminescence intensity when compared to undoped nanowires. Zn impurities also redshifted the photoluminescence signal compared to the bulk band gap value.

Original languageEnglish
Title of host publication14th IEEE International Conference on Nanotechnology
PublisherIEEE
Pages825-829
Number of pages5
ISBN (Print)978-1-4799-5622-7
DOIs
Publication statusPublished - 26 Nov 2014
MoE publication typeA4 Article in a conference publication
EventIEEE International Conference on Nanotechnology - Toronto, Canada
Duration: 18 Aug 201421 Aug 2014
Conference number: 14

Conference

ConferenceIEEE International Conference on Nanotechnology
Abbreviated titleIEEE-NANO
Country/TerritoryCanada
CityToronto
Period18/08/201421/08/2014

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