Effects of Therminal Annealing and Amorphizing on Si(1-x)Ge(x) Layers Formated by High Dose germanium Ion Implantion

E.O. Ristolainen, Z. Xia

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publicationSCANDEM-94, 13-15 June, 1994, Kuopio
    Pages158-159
    Publication statusPublished - 1994
    MoE publication typeA4 Article in a conference publication

    Keywords

    • ion implantion
    • SiGe alloy
    • SIMS

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