Effects of nitrogen doping on voids in perfect silicon

T. Tuomi, P.J. McNally, Peter Becker

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationHampuri
    Publication statusPublished - 2003
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameHASYLAB-DESY Annual Report 2002, Part I


    • nitrogen doping
    • silicon
    • synchrotron x-ray topography
    • voids

    Cite this