Effects of nitrogen doping on voids in perfect silicon

T. Tuomi, P.J. McNally, Peter Becker

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationHampuri
    Pages245-246
    Publication statusPublished - 2003
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameHASYLAB-DESY Annual Report 2002, Part I

    Keywords

    • nitrogen doping
    • silicon
    • synchrotron x-ray topography
    • voids

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