Effects of low energy e-beam irradiation on cathodoluminescence from GaN

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • Sami Suihkonen

  • Henri Nykänen
  • Tomoyuki Tanikawa
  • Masahito Yamaguchi
  • Yoshio Honda
  • Hiroshi Amano

Research units

Abstract

We present cathodoluminescence (CL) studies on low energy e-beam irradiated (LEEBI) metal-organic vapor phase epitaxy (MOVPE) grown GaN films. High intensity LEEBI has been reported to reduce the band-edge photoluminescence intensity of MOVPE grown GaN films. Here we observe similar reduction of band-edge CL intensity with increasing LEEBI dose. The irradiation damage is found to be concentrated in the LEEBI energy dissipation depth by CL depth profiling. We have previously attributed the LEEBI induced reduction of band-edge intensity to the activation of in-grown Ga-vacancies. Here we observe no increase in the relative intensity of defect related yellow or blue CL emission peaks in the LEEBI treated samples. This indicates that blue or yellow emission in undoped GaN is not related to in-grown Ga-vacancies. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Details

Original languageEnglish
Pages (from-to)383-385
Number of pages3
JournalPHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE
Volume210
Issue number2
Publication statusPublished - Feb 2013
MoE publication typeA1 Journal article-refereed

    Research areas

  • cathodoluminescence, Ga-vacancy, GaN, LEEBI

ID: 946344