Effects of heavy ion and proton irradiation on a SLC NAND flash memory

Lucas Matana Luza; Alexandre Bosser; Viyas Gupta; Arto Javanainen; Ali Mohammadzadeh; Luigi Dilillo

doi:10.1109/DFT.2019.8875475

Effects of heavy ion and proton irradiation on a SLC NAND flash memory

Lucas Matana Luza, Alexandre Bosser, Viyas Gupta, Arto Javanainen, Ali Mohammadzadeh, Luigi Dilillo

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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Abstract

Space applications frequently use flash memories for mass storage data. However, the technology applied in the memory array and peripheral circuity are not inherently radiation tolerant. This work introduces the results of radiation test campaigns with heavy ions and protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets and raw error cross sections were presented, as well as an evaluation of the occurrences of the events. Characterization of effects on the embedded data registers was also performed.

Original language	English
Title of host publication	2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2019
Publisher	IEEE
ISBN (Electronic)	978-1-7281-2260-1
ISBN (Print)	978-1-7281-2261-8
DOIs	https://doi.org/10.1109/DFT.2019.8875475
Publication status	Published - 1 Oct 2019
MoE publication type	A4 Conference publication
Event	IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems - Noordwijk, Netherlands Duration: 2 Oct 2019 → 4 Oct 2019 Conference number: 32

Publication series

Name	Proceedings : IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems
ISSN (Print)	1550-5774
ISSN (Electronic)	2377-7966

Conference

Conference	IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems
Abbreviated title	DFT
Country/Territory	Netherlands
City	Noordwijk
Period	02/10/2019 → 04/10/2019

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10.1109/DFT.2019.8875475

ELEC_Bosser_Effects_of_Heavy_Ion_2019_DFTSAccepted author manuscript, 1.61 MB

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Luza, L. M., Bosser, A., Gupta, V., Javanainen, A., Mohammadzadeh, A., & Dilillo, L. (2019). Effects of heavy ion and proton irradiation on a SLC NAND flash memory. In 2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2019 Article 8875475 ( Proceedings : IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems). IEEE. https://doi.org/10.1109/DFT.2019.8875475

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title = "Effects of heavy ion and proton irradiation on a SLC NAND flash memory",

abstract = "Space applications frequently use flash memories for mass storage data. However, the technology applied in the memory array and peripheral circuity are not inherently radiation tolerant. This work introduces the results of radiation test campaigns with heavy ions and protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets and raw error cross sections were presented, as well as an evaluation of the occurrences of the events. Characterization of effects on the embedded data registers was also performed.",

author = "Luza, {Lucas Matana} and Alexandre Bosser and Viyas Gupta and Arto Javanainen and Ali Mohammadzadeh and Luigi Dilillo",

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doi = "10.1109/DFT.2019.8875475",

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Luza, LM, Bosser, A, Gupta, V, Javanainen, A, Mohammadzadeh, A & Dilillo, L 2019, Effects of heavy ion and proton irradiation on a SLC NAND flash memory. in 2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2019., 8875475, Proceedings : IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems, IEEE, IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, Noordwijk, Netherlands, 02/10/2019. https://doi.org/10.1109/DFT.2019.8875475

Effects of heavy ion and proton irradiation on a SLC NAND flash memory. / Luza, Lucas Matana; Bosser, Alexandre; Gupta, Viyas et al.
2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2019. IEEE, 2019. 8875475 ( Proceedings : IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Dilillo, Luigi

N1 - Conference code: 32

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N2 - Space applications frequently use flash memories for mass storage data. However, the technology applied in the memory array and peripheral circuity are not inherently radiation tolerant. This work introduces the results of radiation test campaigns with heavy ions and protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets and raw error cross sections were presented, as well as an evaluation of the occurrences of the events. Characterization of effects on the embedded data registers was also performed.

AB - Space applications frequently use flash memories for mass storage data. However, the technology applied in the memory array and peripheral circuity are not inherently radiation tolerant. This work introduces the results of radiation test campaigns with heavy ions and protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets and raw error cross sections were presented, as well as an evaluation of the occurrences of the events. Characterization of effects on the embedded data registers was also performed.

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Luza LM, Bosser A, Gupta V, Javanainen A, Mohammadzadeh A, Dilillo L. Effects of heavy ion and proton irradiation on a SLC NAND flash memory. In 2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2019. IEEE. 2019. 8875475. ( Proceedings : IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems). doi: 10.1109/DFT.2019.8875475

Effects of heavy ion and proton irradiation on a SLC NAND flash memory

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