Effects of heavy ion and proton irradiation on a SLC NAND flash memory

Lucas Matana Luza, Alexandre Bosser, Viyas Gupta, Arto Javanainen, Ali Mohammadzadeh, Luigi Dilillo

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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Abstract

Space applications frequently use flash memories for mass storage data. However, the technology applied in the memory array and peripheral circuity are not inherently radiation tolerant. This work introduces the results of radiation test campaigns with heavy ions and protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets and raw error cross sections were presented, as well as an evaluation of the occurrences of the events. Characterization of effects on the embedded data registers was also performed.

Original languageEnglish
Title of host publication2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2019
PublisherIEEE
ISBN (Electronic)978-1-7281-2260-1
ISBN (Print)978-1-7281-2261-8
DOIs
Publication statusPublished - 1 Oct 2019
MoE publication typeA4 Article in a conference publication
EventIEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems - Noordwijk, Netherlands
Duration: 2 Oct 20194 Oct 2019
Conference number: 32

Publication series

Name Proceedings : IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems
ISSN (Print)1550-5774
ISSN (Electronic)2377-7966

Conference

ConferenceIEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems
Abbreviated titleDFT
CountryNetherlands
CityNoordwijk
Period02/10/201904/10/2019

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