Effects of Ga+ ion implantation on the magnetoresistive properties of spin valves

E. Kerr*, S. van Dijken, R. M. Langford, J. M D Coey

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)

Abstract

The effects of Ga+ ion implantation in SiO2/Ta(5 nm)/NiFe(3.5 nm)/CoFe(1.5 nm)/Cu(2.9 nm) /CoFe(2.5 nm)/IrMn(10 nm)/Ta(5 nm) spin valve stacks were investigated. As-deposited films show a giant magnetoresistance (GMR) of 7.3% and an exchange bias field (Hex) of 42 mT. After implantation with 30 keV Ga+ ions at doses ranging from 10 12 to 1016 ions/cm2, we observe a dramatic decrease in GMR and exchange bias field together with an increase in film resistance. The effects of Ga+ ion implantation during FIB milling of small GMR elements was investigated by reducing 10 μm spin valve lines to line widths ranging from 7 to 0.5 μm. The GMR and exchange bias field were found to rapidly decrease with decrease in spin valve width. Magnetic field annealing after Ga+ ion implantation does not restore the spin valve properties.

Original languageEnglish
Pages (from-to)124-126
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume290-291
Issue numberPart 1
DOIs
Publication statusPublished - Apr 2005
MoE publication typeA1 Journal article-refereed

Keywords

  • Focussed ion beam patterning
  • Ion implantation
  • Magnetoresisitance
  • Spin valve

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