Effects of electrostatic confinement in a silicon single-electron pump

A. Rossi*, T. Tanttu, K. Y. Tan, R. Zhao, K. W. Chan, I. Iisakka, G. C. Tettamanzi, S. Rogge, M. Möttönen, A. S. Dzurak

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the robustness of the pumping mechanism can be dramatically enhanced and the detrimental effects due to non-adiabatic transitions are largely reduced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million.

Original languageEnglish
Title of host publicationCPEM 2014 - 29th Conference on Precision Electromagnetic Measurements, Digest
PublisherIEEE
Pages440-441
Number of pages2
ISBN (Electronic)9781479952052
DOIs
Publication statusPublished - 12 Sep 2014
MoE publication typeA4 Article in a conference publication
EventConference on Precision Electromagnetic Measurements - Rio de Janeiro, Brazil
Duration: 24 Aug 201429 Aug 2014
Conference number: 29

Conference

ConferenceConference on Precision Electromagnetic Measurements
Abbreviated titleCPEM
Country/TerritoryBrazil
CityRio de Janeiro
Period24/08/201429/08/2014

Keywords

  • Charge pumping
  • electrical current standard
  • quantum dot
  • silicon
  • single-electron pump

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