Effects of electrostatic confinement in a silicon single-electron pump

A. Rossi; T. Tanttu; K. Y. Tan; R. Zhao; K. W. Chan; I. Iisakka; G. C. Tettamanzi; S. Rogge; M. Möttönen; A. S. Dzurak

doi:10.1109/CPEM.2014.6898448

Effects of electrostatic confinement in a silicon single-electron pump

A. Rossi^*, T. Tanttu, K. Y. Tan, R. Zhao, K. W. Chan, I. Iisakka, G. C. Tettamanzi, S. Rogge, M. Möttönen, A. S. Dzurak

^*Corresponding author for this work

Department of Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the robustness of the pumping mechanism can be dramatically enhanced and the detrimental effects due to non-adiabatic transitions are largely reduced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million.

Original language	English
Title of host publication	CPEM 2014 - 29th Conference on Precision Electromagnetic Measurements, Digest
Publisher	IEEE
Pages	440-441
Number of pages	2
ISBN (Electronic)	9781479952052
DOIs	https://doi.org/10.1109/CPEM.2014.6898448
Publication status	Published - 12 Sept 2014
MoE publication type	A4 Conference publication
Event	Conference on Precision Electromagnetic Measurements - Rio de Janeiro, Brazil Duration: 24 Aug 2014 → 29 Aug 2014 Conference number: 29

Conference

Conference	Conference on Precision Electromagnetic Measurements
Abbreviated title	CPEM
Country/Territory	Brazil
City	Rio de Janeiro
Period	24/08/2014 → 29/08/2014

Keywords

Charge pumping
electrical current standard
quantum dot
silicon
single-electron pump

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10.1109/CPEM.2014.6898448

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Rossi, A., Tanttu, T., Tan, K. Y., Zhao, R., Chan, K. W., Iisakka, I., Tettamanzi, G. C., Rogge, S., Möttönen, M., & Dzurak, A. S. (2014). Effects of electrostatic confinement in a silicon single-electron pump. In CPEM 2014 - 29th Conference on Precision Electromagnetic Measurements, Digest (pp. 440-441). Article 6898448 IEEE. https://doi.org/10.1109/CPEM.2014.6898448

@inproceedings{d3e02a840e03493db01f7fffc5bff7b6,

title = "Effects of electrostatic confinement in a silicon single-electron pump",

abstract = "Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the robustness of the pumping mechanism can be dramatically enhanced and the detrimental effects due to non-adiabatic transitions are largely reduced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million.",

keywords = "Charge pumping, electrical current standard, quantum dot, silicon, single-electron pump",

author = "A. Rossi and T. Tanttu and Tan, {K. Y.} and R. Zhao and Chan, {K. W.} and I. Iisakka and Tettamanzi, {G. C.} and S. Rogge and M. M{\"o}tt{\"o}nen and Dzurak, {A. S.}",

year = "2014",

month = sep,

day = "12",

doi = "10.1109/CPEM.2014.6898448",

language = "English",

pages = "440--441",

booktitle = "CPEM 2014 - 29th Conference on Precision Electromagnetic Measurements, Digest",

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note = "Conference on Precision Electromagnetic Measurements, CPEM ; Conference date: 24-08-2014 Through 29-08-2014",

}

Rossi, A, Tanttu, T, Tan, KY, Zhao, R, Chan, KW, Iisakka, I, Tettamanzi, GC, Rogge, S, Möttönen, M & Dzurak, AS 2014, Effects of electrostatic confinement in a silicon single-electron pump. in CPEM 2014 - 29th Conference on Precision Electromagnetic Measurements, Digest., 6898448, IEEE, pp. 440-441, Conference on Precision Electromagnetic Measurements, Rio de Janeiro, Brazil, 24/08/2014. https://doi.org/10.1109/CPEM.2014.6898448

TY - GEN

T1 - Effects of electrostatic confinement in a silicon single-electron pump

AU - Rossi, A.

AU - Tanttu, T.

AU - Tan, K. Y.

AU - Zhao, R.

AU - Chan, K. W.

AU - Iisakka, I.

AU - Tettamanzi, G. C.

AU - Rogge, S.

AU - Möttönen, M.

AU - Dzurak, A. S.

N1 - Conference code: 29

PY - 2014/9/12

Y1 - 2014/9/12

N2 - Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the robustness of the pumping mechanism can be dramatically enhanced and the detrimental effects due to non-adiabatic transitions are largely reduced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million.

AB - Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the robustness of the pumping mechanism can be dramatically enhanced and the detrimental effects due to non-adiabatic transitions are largely reduced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million.

KW - Charge pumping

KW - electrical current standard

KW - quantum dot

KW - silicon

KW - single-electron pump

UR - http://www.scopus.com/inward/record.url?scp=84907898093&partnerID=8YFLogxK

U2 - 10.1109/CPEM.2014.6898448

DO - 10.1109/CPEM.2014.6898448

M3 - Conference article in proceedings

AN - SCOPUS:84907898093

SP - 440

EP - 441

BT - CPEM 2014 - 29th Conference on Precision Electromagnetic Measurements, Digest

PB - IEEE

T2 - Conference on Precision Electromagnetic Measurements

Y2 - 24 August 2014 through 29 August 2014

ER -

Effects of electrostatic confinement in a silicon single-electron pump

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Keywords

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