Effects of atomic layer deposition on the optical properties of two-dimensional transition metal dichalcogenide monolayers

Mikko Turunen, Henry Fernandez Pizarro, Suvi-Tuuli Akkanen, Heli Seppänen, Zhipei Sun*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Two-dimensional semiconducting transition metal dichalcogenides (TMDs) have attracted significant interest due to their unique optoelectronic properties. More often, these materials are enclosed inside a dielectric layer that can work as an insulator for field-effect transistors. The insulating layer is typically grown with atomic layer deposition (ALD). Here, we study the effects on bare and hBN-covered monolayer MoS 2 and WSe 2 flakes with ALD TiO 2 films. Our results reveal a significant shift and decrease in intensity in photoluminescence and Raman signals of the monolayer TMDs. Further analysis suggests that these changes are caused by chemical doping, strain, and dielectric screening after the ALD. Our study not only sheds light on the impact of ALD on the properties of TMDs, but also indicates ALD can be an alternative method to engineer the doping, strain and dielectric environment for potential optoelectronics and photonics applications.

Original languageEnglish
Article number045018
Number of pages9
Journal2D Materials
Volume10
Issue number4
Early online date18 Aug 2023
DOIs
Publication statusPublished - Oct 2023
MoE publication typeA1 Journal article-refereed

Keywords

  • two-dimensional materials
  • atomic-layer deposition
  • van der Waals heterostructures

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