Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1- x)2O3 thin films

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • V. Prozheeva
  • R. Hölldobler
  • H. Von Wenckstern
  • M. Grundmann
  • F. Tuomisto

Research units

  • Leipzig University

Abstract

Various nominally undoped and Si-doped (InxGa1- x)2O3 thin films were grown by pulsed laser deposition in a continuous composition spread mode on c-plane α-sapphire and (100)-oriented MgO substrates. Positron annihilation spectroscopy in the Doppler broadening mode was used as the primary characterisation technique in order to investigate the effect of alloy composition and dopant atoms on the formation of vacancy-type defects. In the undoped samples, we observe a Ga2O3-like trend for low indium concentrations changing to In2O3-like behaviour along with the increase in the indium fraction. Increasing indium concentration is found to suppress defect formation in the undoped samples at [In] > 70 at. %. Si doping leads to positron saturation trapping in VIn-like defects, suggesting a vacancy concentration of at least mid-1018 cm-3 independent of the indium content.

Details

Original languageEnglish
Article number125705
Pages (from-to)1-6
JournalJournal of Applied Physics
Volume123
Issue number12
Publication statusPublished - 28 Mar 2018
MoE publication typeA1 Journal article-refereed

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