Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

Haibing Huang*, Chiara Modanese, Shenghua Sun, Guillaume von Gastrow, Jianbo Wang, Toni P. Pasanen, Shuo Li, Lichun Wang, Yameng Bao, Zhen Zhu, Sami Sneck, Hele Savin

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

16 Citations (Scopus)
14 Downloads (Pure)


In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiNx stacks. Our study shows that SiO2/Al2O3/SiNx stacks can well passivate both p+ and n+ emitters due to an excellent chemical passivation combined with a weak field-effect passivation. Good quality boron and phosphorus emitters were achieved over a broad emitter-doping range, as demonstrated by post-fired emitter saturation current of 20 and 30 fA cm−2, respectively. Based on the results obtained with SiO2/Al2O3/SiNx emitter passivation, we present an industrial roadmap for a p-PERT bifacial cell structure. Using this roadmap, we demonstrate industrial p-PERT bifacial cells with front side efficiency of 20.5%, rear side efficiency of 19.8% (bifaciality factor BF = 0.98) for rear textured cells and 17.5% (BF = 0.85) for rear planar cells. In particular, the cells with bifacial SiO2/Al2O3/SiNx passivation on both p+ and n+ emitters also demonstrate promising performance and a simplified cell process. The results show that SiO2/Al2O3/SiNx emitter passivation scheme is a promising candidate for photovoltaic industry.

Original languageEnglish
Pages (from-to)356-364
Number of pages9
JournalSolar Energy Materials and Solar Cells
Publication statusPublished - 1 Nov 2018
MoE publication typeA1 Journal article-refereed


  • AlO
  • Boron emitter
  • PERT
  • Phosphorus emitter
  • SiO
  • Surface passivation

Fingerprint Dive into the research topics of 'Effective passivation of p<sup>+</sup> and n<sup>+</sup> emitters using SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells'. Together they form a unique fingerprint.

Cite this