Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

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Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells. / Huang, Haibing; Modanese, Chiara; Sun, Shenghua; von Gastrow, Guillaume; Wang, Jianbo; Pasanen, Toni P.; Li, Shuo; Wang, Lichun; Bao, Yameng; Zhu, Zhen; Sneck, Sami; Savin, Hele.

In: Solar Energy Materials and Solar Cells, Vol. 186, 01.11.2018, p. 356-364.

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@article{81ec0c3c779a4d2aba1d968ef711ba60,
title = "Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells",
abstract = "In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiNx stacks. Our study shows that SiO2/Al2O3/SiNx stacks can well passivate both p+ and n+ emitters due to an excellent chemical passivation combined with a weak field-effect passivation. Good quality boron and phosphorus emitters were achieved over a broad emitter-doping range, as demonstrated by post-fired emitter saturation current of 20 and 30 fA cm−2, respectively. Based on the results obtained with SiO2/Al2O3/SiNx emitter passivation, we present an industrial roadmap for a p-PERT bifacial cell structure. Using this roadmap, we demonstrate industrial p-PERT bifacial cells with front side efficiency of 20.5{\%}, rear side efficiency of 19.8{\%} (bifaciality factor BF = 0.98) for rear textured cells and 17.5{\%} (BF = 0.85) for rear planar cells. In particular, the cells with bifacial SiO2/Al2O3/SiNx passivation on both p+ and n+ emitters also demonstrate promising performance and a simplified cell process. The results show that SiO2/Al2O3/SiNx emitter passivation scheme is a promising candidate for photovoltaic industry.",
keywords = "AlO, Boron emitter, PERT, Phosphorus emitter, SiO, Surface passivation",
author = "Haibing Huang and Chiara Modanese and Shenghua Sun and {von Gastrow}, Guillaume and Jianbo Wang and Pasanen, {Toni P.} and Shuo Li and Lichun Wang and Yameng Bao and Zhen Zhu and Sami Sneck and Hele Savin",
year = "2018",
month = "11",
day = "1",
doi = "10.1016/j.solmat.2018.07.007",
language = "English",
volume = "186",
pages = "356--364",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier Science B.V.",

}

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TY - JOUR

T1 - Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

AU - Huang, Haibing

AU - Modanese, Chiara

AU - Sun, Shenghua

AU - von Gastrow, Guillaume

AU - Wang, Jianbo

AU - Pasanen, Toni P.

AU - Li, Shuo

AU - Wang, Lichun

AU - Bao, Yameng

AU - Zhu, Zhen

AU - Sneck, Sami

AU - Savin, Hele

PY - 2018/11/1

Y1 - 2018/11/1

N2 - In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiNx stacks. Our study shows that SiO2/Al2O3/SiNx stacks can well passivate both p+ and n+ emitters due to an excellent chemical passivation combined with a weak field-effect passivation. Good quality boron and phosphorus emitters were achieved over a broad emitter-doping range, as demonstrated by post-fired emitter saturation current of 20 and 30 fA cm−2, respectively. Based on the results obtained with SiO2/Al2O3/SiNx emitter passivation, we present an industrial roadmap for a p-PERT bifacial cell structure. Using this roadmap, we demonstrate industrial p-PERT bifacial cells with front side efficiency of 20.5%, rear side efficiency of 19.8% (bifaciality factor BF = 0.98) for rear textured cells and 17.5% (BF = 0.85) for rear planar cells. In particular, the cells with bifacial SiO2/Al2O3/SiNx passivation on both p+ and n+ emitters also demonstrate promising performance and a simplified cell process. The results show that SiO2/Al2O3/SiNx emitter passivation scheme is a promising candidate for photovoltaic industry.

AB - In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiNx stacks. Our study shows that SiO2/Al2O3/SiNx stacks can well passivate both p+ and n+ emitters due to an excellent chemical passivation combined with a weak field-effect passivation. Good quality boron and phosphorus emitters were achieved over a broad emitter-doping range, as demonstrated by post-fired emitter saturation current of 20 and 30 fA cm−2, respectively. Based on the results obtained with SiO2/Al2O3/SiNx emitter passivation, we present an industrial roadmap for a p-PERT bifacial cell structure. Using this roadmap, we demonstrate industrial p-PERT bifacial cells with front side efficiency of 20.5%, rear side efficiency of 19.8% (bifaciality factor BF = 0.98) for rear textured cells and 17.5% (BF = 0.85) for rear planar cells. In particular, the cells with bifacial SiO2/Al2O3/SiNx passivation on both p+ and n+ emitters also demonstrate promising performance and a simplified cell process. The results show that SiO2/Al2O3/SiNx emitter passivation scheme is a promising candidate for photovoltaic industry.

KW - AlO

KW - Boron emitter

KW - PERT

KW - Phosphorus emitter

KW - SiO

KW - Surface passivation

UR - http://www.scopus.com/inward/record.url?scp=85049939475&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2018.07.007

DO - 10.1016/j.solmat.2018.07.007

M3 - Article

VL - 186

SP - 356

EP - 364

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

ER -

ID: 26865467