Abstract
Positron annihilation spectroscopy has been used to study GaN grown by metal-organic chemical vapor deposition on misoriented 4H-SiC substrates. Two kinds of vacancy defects are observed: Ga vacancies and larger vacancy clusters in all the studied layers. In addition to vacancies, positrons annihilate at shallow traps that are likely to be dislocations. The results show that the vacancy concentration increases and the shallow positron trap concentration decreases with the increasing substrate misorientation.
Original language | English |
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Article number | 091905 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2006 |
MoE publication type | A1 Journal article-refereed |
Keywords
- annihilation
- GaN
- misoriented
- positron
- vacancy