Effect of silicon on the elastic-plastic transition of GaAs crystal

Research output: Contribution to journalArticleScientificpeer-review


Research units

  • University of Silesia in Katowice
  • University of Helsinki


Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent deformation of GaAs nanovolume. We found the substitutional Si point defects to decrease the pressure of GaAs-I → GaAs-II phase transformation, which proves the elastic-plastic transition of Si-doped GaAs crystal is a phase-change-driven phenomenon.


Original languageEnglish
Pages (from-to)31-34
Number of pages4
JournalScripta Materialia
Publication statusPublished - 1 Jun 2015
MoE publication typeA1 Journal article-refereed

    Research areas

  • Ab initio calculations, Compound semiconductors, Lattice defects, Nanoindentation, Phase transformations

ID: 10212453