Abstract
Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent deformation of GaAs nanovolume. We found the substitutional Si point defects to decrease the pressure of GaAs-I → GaAs-II phase transformation, which proves the elastic-plastic transition of Si-doped GaAs crystal is a phase-change-driven phenomenon.
| Original language | English |
|---|---|
| Pages (from-to) | 31-34 |
| Number of pages | 4 |
| Journal | Scripta Materialia |
| Volume | 102 |
| DOIs | |
| Publication status | Published - 1 Jun 2015 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- Ab initio calculations
- Compound semiconductors
- Lattice defects
- Nanoindentation
- Phase transformations
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Karppinen, M. (Manager)
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