Effect of silicon on the elastic-plastic transition of GaAs crystal

D. Chrobak*, J. Räisänen, R. Nowak

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent deformation of GaAs nanovolume. We found the substitutional Si point defects to decrease the pressure of GaAs-I → GaAs-II phase transformation, which proves the elastic-plastic transition of Si-doped GaAs crystal is a phase-change-driven phenomenon.

Original languageEnglish
Pages (from-to)31-34
Number of pages4
JournalScripta Materialia
Volume102
DOIs
Publication statusPublished - 1 Jun 2015
MoE publication typeA1 Journal article-refereed

Keywords

  • Ab initio calculations
  • Compound semiconductors
  • Lattice defects
  • Nanoindentation
  • Phase transformations

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