Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells

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Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells. / Toivonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri.

In: IEE Proceedings-Optoelectronics, Vol. 150, No. 1, 2003, p. 68-71.

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@article{5505822a69024e6f92dbf1bb9466cd7c,
title = "Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells",
keywords = "annealing, dilute nitrides, photoluminescence, annealing, dilute nitrides, photoluminescence, annealing, dilute nitrides, photoluminescence",
author = "Juha Toivonen and Teppo Hakkarainen and Markku Sopanen and Harri Lipsanen",
year = "2003",
doi = "10.1049/ip-opt:20030052",
language = "English",
volume = "150",
pages = "68--71",
journal = "IEE Proceedings-Optoelectronics",
number = "1",

}

RIS - Download

TY - JOUR

T1 - Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells

AU - Toivonen, Juha

AU - Hakkarainen, Teppo

AU - Sopanen, Markku

AU - Lipsanen, Harri

PY - 2003

Y1 - 2003

KW - annealing

KW - dilute nitrides

KW - photoluminescence

KW - annealing

KW - dilute nitrides

KW - photoluminescence

KW - annealing

KW - dilute nitrides

KW - photoluminescence

U2 - 10.1049/ip-opt:20030052

DO - 10.1049/ip-opt:20030052

M3 - Article

VL - 150

SP - 68

EP - 71

JO - IEE Proceedings-Optoelectronics

JF - IEE Proceedings-Optoelectronics

IS - 1

ER -

ID: 4146832