Effect of photon-assisted Andreev reflection in the accuracy of a SINIS turnstile

A. Di Marco, Ville Maisi, F.W.J. Hekking, Jukka Pekola

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)
266 Downloads (Pure)

Abstract

We consider a hybrid single-electron transistor constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (SINIS), operated as a turnstile. We show that the exchange of photons between this system and the high-temperature electromagnetic environment where it is embedded enhances Andreev reflection, thereby limiting the single-electron tunneling accuracy.
Original languageEnglish
Article number094514
Pages (from-to)1-12
Number of pages12
JournalPhysical Review B
Volume92
Issue number9
DOIs
Publication statusPublished - 28 Sep 2015
MoE publication typeA1 Journal article-refereed

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