Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN

T. Heikkinen, J. Pavlov, T. Ceponis, E. Gaubas, M. Zając, F. Tuomisto*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)


We have applied positron annihilation spectroscopy to study the formation of Ga vacancy related defects in Mg and Mn doped bulk GaN crystals grown by the ammonothermal method. We show that Mn doping has little or no effect on the formation of Ga vacancies, while Mg doping strongly suppresses their formation, in spite of both dopants leading to highly resistive material. We suggest the differences are primarily due to the hydrogen-dopant interactions. Further investigations are called for to draw a detailed picture of the atomic scale phenomena in the synthesis of ammonothermal GaN.

Original languageEnglish
Article number125803
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - 1 Oct 2020
MoE publication typeA1 Journal article-refereed


  • A1. Doping
  • A1. Point defects
  • A2. Hydrothermal growth
  • B1. Nitrides
  • B2. Semiconducting III-V materials


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