Effect of InP passivation on carrier recombination in In_(x)Ga_(1-x)As/GaAs surface quantum wells

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

Research units

  • VTT Technical Research Centre of Finland
  • Ludwig-Maximilians-University

Details

Original languageEnglish
Title of host publication10th International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1998
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Indium Phosphide and Related Materials - Tsukuba, Japan
Duration: 11 May 199815 May 1998

Publication series

NameIEEE CONFERENCE PROCEEDINGS
PublisherIEEE
ISSN (Print)1092-8669

Conference

ConferenceInternational Conference on Indium Phosphide and Related Materials
CountryJapan
CityTsukuba
Period11/05/199815/05/1998

    Research areas

  • GaAs, InP, quantum wells

ID: 5052360