Effect of InP passivation on carrier recombination in In_(x)Ga_(1-x)As/GaAs surface quantum wells

H. Lipsanen, M. Sopanen, J. Ahopelto, J. Sandmann, J. Feldmann

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publication10th International Conference on Indium Phosphide and Related Materials
    PublisherIEEE
    Pages549-551
    Number of pages3
    ISBN (Print)0-7803-4220-8
    DOIs
    Publication statusPublished - 1998
    MoE publication typeA4 Article in a conference publication
    EventInternational Conference on Indium Phosphide and Related Materials - Tsukuba, Japan
    Duration: 11 May 199815 May 1998

    Publication series

    NameIEEE CONFERENCE PROCEEDINGS
    PublisherIEEE
    ISSN (Print)1092-8669

    Conference

    ConferenceInternational Conference on Indium Phosphide and Related Materials
    CountryJapan
    CityTsukuba
    Period11/05/199815/05/1998

    Keywords

    • GaAs
    • InP
    • quantum wells

    Cite this

    Lipsanen, H., Sopanen, M., Ahopelto, J., Sandmann, J., & Feldmann, J. (1998). Effect of InP passivation on carrier recombination in In_(x)Ga_(1-x)As/GaAs surface quantum wells. In 10th International Conference on Indium Phosphide and Related Materials (pp. 549-551). (IEEE CONFERENCE PROCEEDINGS). IEEE. https://doi.org/10.1109/ICIPRM.1998.712601