Effect of InP passivation on carrier recombination in InGaAs/GaAs surface quantum wells

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • VTT Technical Research Centre of Finland
  • Ludwig-Maximilians-University

Details

Original languageEnglish
Pages (from-to)1133-1134
Number of pages2
JournalJapanese Journal of Applied Physics
Volume38
Issue number2B
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

    Research areas

  • optical spectroscopy, passivation, quantum well

ID: 4865372