Effect of InP passivation on carrier recombination in InGaAs/GaAs surface quantum wells

H. Lipsanen, M. Sopanen, J. Ahopelto, J. Sandman, J. Feldmann

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1133-1134
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Issue number2B
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed


    • optical spectroscopy
    • passivation
    • quantum well

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