Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

Pekka Törmä; Olli Svensk; Muhammad Ali; Sami Suihkonen; Markku Sopanen; Maxim Odnoblyudov; Vladislav Bougrov

doi:10.1016/j.jcrysgro.2008.07.031

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

Pekka Törmä^*, Olli Svensk, Muhammad Ali, Sami Suihkonen, Markku Sopanen, Maxim Odnoblyudov, Vladislav Bougrov

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

28 Citations (Scopus)

Abstract

This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by metalorganic vapor phase epitaxy (MOVPE). The In content of the UL is studied in the range of 0-2.7%. Multiple quantum well (MQW) surface morphology and crystal structure were characterized by atomic force microscopy (AFM), high resolution X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). Electroluminescence (EL) intensity was found to increase almost 50% at 20 mA injection current by introducing an optimized UL under the MQW stack in the LED structure. Also a decrease in the full width of half maximum (FWHM) and the blue-shift of the EL spectrum compared to the reference sample were observed in the all UL consisting samples. © 2008 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	5162-5165
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	23
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.07.031
Publication status	Published - 15 Nov 2008
MoE publication type	A1 Journal article-refereed

Keywords

78.60.Fi
81.15.Gh
85.60.Jb
A1. Atomic force microscopy
A1. X-ray diffraction
A3. MOCVD
B1. Nitrides
B3. Light emitting diode
B3. Semiconducting III-V materials

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10.1016/j.jcrysgro.2008.07.031

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title = "Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs",

abstract = "This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by metalorganic vapor phase epitaxy (MOVPE). The In content of the UL is studied in the range of 0-2.7\%. Multiple quantum well (MQW) surface morphology and crystal structure were characterized by atomic force microscopy (AFM), high resolution X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). Electroluminescence (EL) intensity was found to increase almost 50\% at 20 mA injection current by introducing an optimized UL under the MQW stack in the LED structure. Also a decrease in the full width of half maximum (FWHM) and the blue-shift of the EL spectrum compared to the reference sample were observed in the all UL consisting samples. {\textcopyright} 2008 Elsevier B.V. All rights reserved.",

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author = "Pekka T{\"o}rm{\"a} and Olli Svensk and Muhammad Ali and Sami Suihkonen and Markku Sopanen and Maxim Odnoblyudov and Vladislav Bougrov",

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doi = "10.1016/j.jcrysgro.2008.07.031",

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T1 - Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

AU - Törmä, Pekka

AU - Svensk, Olli

AU - Ali, Muhammad

AU - Suihkonen, Sami

AU - Sopanen, Markku

AU - Odnoblyudov, Maxim

AU - Bougrov, Vladislav

PY - 2008/11/15

Y1 - 2008/11/15

N2 - This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by metalorganic vapor phase epitaxy (MOVPE). The In content of the UL is studied in the range of 0-2.7%. Multiple quantum well (MQW) surface morphology and crystal structure were characterized by atomic force microscopy (AFM), high resolution X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). Electroluminescence (EL) intensity was found to increase almost 50% at 20 mA injection current by introducing an optimized UL under the MQW stack in the LED structure. Also a decrease in the full width of half maximum (FWHM) and the blue-shift of the EL spectrum compared to the reference sample were observed in the all UL consisting samples. © 2008 Elsevier B.V. All rights reserved.

AB - This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by metalorganic vapor phase epitaxy (MOVPE). The In content of the UL is studied in the range of 0-2.7%. Multiple quantum well (MQW) surface morphology and crystal structure were characterized by atomic force microscopy (AFM), high resolution X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). Electroluminescence (EL) intensity was found to increase almost 50% at 20 mA injection current by introducing an optimized UL under the MQW stack in the LED structure. Also a decrease in the full width of half maximum (FWHM) and the blue-shift of the EL spectrum compared to the reference sample were observed in the all UL consisting samples. © 2008 Elsevier B.V. All rights reserved.

KW - 78.60.Fi

KW - 81.15.Gh

KW - 85.60.Jb

KW - A1. Atomic force microscopy

KW - A1. X-ray diffraction

KW - A3. MOCVD

KW - B1. Nitrides

KW - B3. Light emitting diode

KW - B3. Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/56249144469

U2 - 10.1016/j.jcrysgro.2008.07.031

DO - 10.1016/j.jcrysgro.2008.07.031

M3 - Article

SN - 0022-0248

VL - 310

SP - 5162

EP - 5165

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 23

ER -

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

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