Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Filip Tuomisto, Kimmo Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P.R. Hageman, J. Likonen

Research output: Contribution to journalArticleScientificpeer-review

87 Citations (Scopus)
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Abstract

We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.
Original languageEnglish
Article number031915
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number3
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Keywords

  • cluster
  • GaN
  • impurity
  • polarity
  • vacancy

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