Effect of growth conditions on electrical properties of Mg-doped p-GaN

Olli Svensk*, Sami Suihkonen, Teemu Lang, Harri Lipsanen, Markku Sopanen, Maxim Odnoblyudov, Vladislav Bougrov

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    25 Citations (Scopus)

    Abstract

    In this work the effect of carrier gas and post-growth activation conditions on the electrical properties of Mg-doped p-GaN single layers grown in a vertical flow close-coupled showerhead MOCVD system is investigated. The results of Hall effect measurements show that although the optimal Mg precursor flow rate depends on the growth atmosphere and is smaller when N2 is used as a carrier gas, similar electrical properties could be realized with both H2 and N2 carrier gases. The results of SIMS analysis demonstrate that while Mg incorporation is higher for N2 carrier gas, the efficiency of Mg activation is higher when H2 is used as carrier gas. We have also observed that the structural quality of N2 grown layers is substantially lower compared to the H2 case. © 2006 Elsevier B.V. All rights reserved.

    Original languageEnglish
    Pages (from-to)811-814
    Number of pages4
    JournalJournal of Crystal Growth
    Volume298
    Issue numberSPEC. ISS
    DOIs
    Publication statusPublished - Jan 2007
    MoE publication typeA1 Journal article-refereed

    Keywords

    • A1. Doping
    • A3. MOCVD
    • B1. Nitrides
    • B2. Semiconducting III-V materials

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