Effect of gating and pressure on the electronic transport properties of crossed nanotube junctions: formation of a Schottky barrier

P. Havu, M.J. Hashemi, M. Kaukonen, E.T. Seppälä, R.M. Nieminen

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)
Original languageEnglish
JournalJournal of physics: Condensed matter
Volume23
Issue number11
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

Keywords

  • nanotube
  • Schottky

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