Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

Details

Original languageEnglish
JournalPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS
Issue number9
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

ID: 733333