Effect of different ALD Al2O3 oxidants on the surface passivation of black silicon

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Research units


We study how different oxidants in atomic layer deposition of aluminium oxide (ALD Al2O3) affect the surface passivation of black silicon. Here we show that processes using ozone cause higher fixed charge but surprisingly lead to lower lifetimes in black silicon samples as compared to water-based samples. In planar samples however, the best surface passivation is reached with O3-based processes. In case of water as oxidant, the planar wafers suffer from severe blistering and poorer surface passivation, while this seems to be the best process for black silicon. To find a reason for the lifetime differences we also study different Al2O3 stacks where both H2O and O3 are used as oxidants. In conclusion, surface texture seems to affect the optimal oxidant in the ALD process.


Original languageEnglish
Title of host publicationProceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)
EditorsPierre-Jean Ribeyron, Andres Cuevas, Arthur Weeber, Christophe Ballif, Stefan Glunz, Jef Poortmans, Rolf Brendel, Armin Aberle, Ron Sinton, Pierre Verlinden, Giso Hahn
Publication statusPublished - 2016
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Crystalline Silicon Photovoltaics - Chambéry, France
Duration: 7 Mar 20169 Mar 2016
Conference number: 6

Publication series

NameEnergy procedia
ISSN (Electronic)1876-6102


ConferenceInternational Conference on Crystalline Silicon Photovoltaics
Abbreviated titleSiliconPV

    Research areas

  • black silicon, surface passivation, aluminum oxide

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