Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Mikko A. Juntunen

Research output: Contribution to journalConference articleScientificpeer-review

1 Citation (Scopus)
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Abstract

Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths. Another important characteristic of a high-quality photodiode is rise time which can be used to approximate bandwidth of the photodiode. We show experimentally that the rise time of black silicon photodiodes is shorter than in planar photodiodes when alumina layer with similar charge is used to make an induced junction in both. Additionally, we show that the rise time can be rather well approximated using an analytical equation, which combines Elmore delay from equivalent circuit with standard RC-delay arising from series and load resistances.
Original languageEnglish
JournalSPIE Conference Proceedings
Volume11997
DOIs
Publication statusPublished - 4 Mar 2022
MoE publication typeA4 Article in a conference publication
EventOptical Components and Materials - San Francisco, United States
Duration: 22 Jan 202228 Feb 2022

Keywords

  • black silicon
  • rise time
  • sheet resistance
  • silicon
  • photodiode

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