Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes

Juha Heinonen; Antti Haarahiltunen; Ville Vähänissi; Toni P. Pasanen; Hele Savin; Mikko A. Juntunen

doi:10.1117/12.2609632

Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Mikko A. Juntunen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

3 Citations (Scopus)

65 Downloads (Pure)

Abstract

Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths. Another important characteristic of a high-quality photodiode is rise time which can be used to approximate bandwidth of the photodiode. We show experimentally that the rise time of black silicon photodiodes is shorter than in planar photodiodes when alumina layer with similar charge is used to make an induced junction in both. Additionally, we show that the rise time can be rather well approximated using an analytical equation, which combines Elmore delay from equivalent circuit with standard RC-delay arising from series and load resistances.

Original language	English
Title of host publication	Optical Components and Materials XIX
Publisher	SPIE
Volume	11997
ISBN (Electronic)	978-1-5106-4866-1
DOIs	https://doi.org/10.1117/12.2609632
Publication status	Published - 4 Mar 2022
MoE publication type	A4 Conference publication
Event	Optical Components and Materials - San Francisco, United States Duration: 22 Jan 2022 → 28 Feb 2022

Publication series

Name	SPIE Conference Proceedings
Publisher	SPIE
ISSN (Print)	0277-786X

Conference

Conference	Optical Components and Materials
Country/Territory	United States
City	San Francisco
Period	22/01/2022 → 28/02/2022

Keywords

black silicon
rise time
sheet resistance
silicon
photodiode

Access to Document

10.1117/12.2609632

Heinonen_Effect_of_anode_sheet_resistance_SPIEFinal published version, 1.16 MB

PREIN: Photonics Research and Innovation
Mäkelä, K. (Principal investigator)
01/01/2019 → 31/12/2022
Project: Academy of Finland: Other research funding

OtaNano
Rissanen, A. (Manager)
Aalto University
Facility/equipment: Facility
OtaNano - Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Facility/equipment: Facility

Cite this

@inproceedings{3db34344c1504c8c83c709081aaa1e8e,

title = "Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes",

abstract = "Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths. Another important characteristic of a high-quality photodiode is rise time which can be used to approximate bandwidth of the photodiode. We show experimentally that the rise time of black silicon photodiodes is shorter than in planar photodiodes when alumina layer with similar charge is used to make an induced junction in both. Additionally, we show that the rise time can be rather well approximated using an analytical equation, which combines Elmore delay from equivalent circuit with standard RC-delay arising from series and load resistances.",

keywords = "black silicon, rise time, sheet resistance, silicon, photodiode",

author = "Juha Heinonen and Antti Haarahiltunen and Ville V{\"a}h{\"a}nissi and Pasanen, {Toni P.} and Hele Savin and Juntunen, {Mikko A.}",

year = "2022",

month = mar,

day = "4",

doi = "10.1117/12.2609632",

language = "English",

volume = "11997",

series = "SPIE Conference Proceedings",

publisher = "SPIE",

booktitle = "Optical Components and Materials XIX",

address = "United States",

note = "Optical Components and Materials ; Conference date: 22-01-2022 Through 28-02-2022",

}

Heinonen, J, Haarahiltunen, A, Vähänissi, V, Pasanen, TP, Savin, H & Juntunen, MA 2022, Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes. in Optical Components and Materials XIX. vol. 11997, SPIE Conference Proceedings, SPIE, Optical Components and Materials, San Francisco, California, United States, 22/01/2022. https://doi.org/10.1117/12.2609632

Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes. / Heinonen, Juha; Haarahiltunen, Antti; Vähänissi, Ville et al.
Optical Components and Materials XIX. Vol. 11997 SPIE, 2022. (SPIE Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes

AU - Heinonen, Juha

AU - Haarahiltunen, Antti

AU - Vähänissi, Ville

AU - Pasanen, Toni P.

AU - Savin, Hele

AU - Juntunen, Mikko A.

PY - 2022/3/4

Y1 - 2022/3/4

N2 - Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths. Another important characteristic of a high-quality photodiode is rise time which can be used to approximate bandwidth of the photodiode. We show experimentally that the rise time of black silicon photodiodes is shorter than in planar photodiodes when alumina layer with similar charge is used to make an induced junction in both. Additionally, we show that the rise time can be rather well approximated using an analytical equation, which combines Elmore delay from equivalent circuit with standard RC-delay arising from series and load resistances.

AB - Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths. Another important characteristic of a high-quality photodiode is rise time which can be used to approximate bandwidth of the photodiode. We show experimentally that the rise time of black silicon photodiodes is shorter than in planar photodiodes when alumina layer with similar charge is used to make an induced junction in both. Additionally, we show that the rise time can be rather well approximated using an analytical equation, which combines Elmore delay from equivalent circuit with standard RC-delay arising from series and load resistances.

KW - black silicon

KW - rise time

KW - sheet resistance

KW - silicon

KW - photodiode

U2 - 10.1117/12.2609632

DO - 10.1117/12.2609632

M3 - Conference article in proceedings

VL - 11997

T3 - SPIE Conference Proceedings

BT - Optical Components and Materials XIX

PB - SPIE

T2 - Optical Components and Materials

Y2 - 22 January 2022 through 28 February 2022

ER -

Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes

Abstract

Publication series

Conference

Keywords

Access to Document

Fingerprint

Projects

PREIN: Photonics Research and Innovation

Equipment

OtaNano

OtaNano - Nanofab

Cite this