Dual origin of defect magnetism in graphene and its reversible switching by molecular doping

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Dual origin of defect magnetism in graphene and its reversible switching by molecular doping. / Nair, R.R.; Tsai, I.-L.; Sepioni, M.; Lehtinen, O.; Keinonen, J.; Krasheninnikov, A.V.; Castro Neto, A.H.; Katsnelson, M.I.; Geim, A.K.; Grigorieva, I.V.

In: Nature Communications, Vol. 4, 2010, 2013, p. 1-6.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Nair, RR, Tsai, I-L, Sepioni, M, Lehtinen, O, Keinonen, J, Krasheninnikov, AV, Castro Neto, AH, Katsnelson, MI, Geim, AK & Grigorieva, IV 2013, 'Dual origin of defect magnetism in graphene and its reversible switching by molecular doping' Nature Communications, vol. 4, 2010, pp. 1-6. https://doi.org/10.1038/ncomms3010

APA

Nair, R. R., Tsai, I-L., Sepioni, M., Lehtinen, O., Keinonen, J., Krasheninnikov, A. V., ... Grigorieva, I. V. (2013). Dual origin of defect magnetism in graphene and its reversible switching by molecular doping. Nature Communications, 4, 1-6. [2010]. https://doi.org/10.1038/ncomms3010

Vancouver

Author

Nair, R.R. ; Tsai, I.-L. ; Sepioni, M. ; Lehtinen, O. ; Keinonen, J. ; Krasheninnikov, A.V. ; Castro Neto, A.H. ; Katsnelson, M.I. ; Geim, A.K. ; Grigorieva, I.V. / Dual origin of defect magnetism in graphene and its reversible switching by molecular doping. In: Nature Communications. 2013 ; Vol. 4. pp. 1-6.

Bibtex - Download

@article{2db17626fb9f489abafbef5fa00adfb6,
title = "Dual origin of defect magnetism in graphene and its reversible switching by molecular doping",
abstract = "Control of magnetism by applied voltage is desirable for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and attracts interest because of its weak spin–orbit interaction, the ability to control electronic properties by the electric field effect and the possibility to introduce paramagnetic centres such as vacancies and adatoms. Here we show that the magnetism of adatoms in graphene is itinerant and can be controlled by doping, so that magnetic moments are switched on and off. The much-discussed vacancy magnetism is found to have a dual origin, with two approximately equal contributions; one from itinerant magnetism and the other from dangling bonds. Our work suggests that graphene’s spin transport can be controlled by the field effect, similar to its electronic and optical properties, and that spin diffusion can be significantly enhanced above a certain carrier density.",
keywords = "graphene, graphene, graphene",
author = "R.R. Nair and I.-L. Tsai and M. Sepioni and O. Lehtinen and J. Keinonen and A.V. Krasheninnikov and {Castro Neto}, A.H. and M.I. Katsnelson and A.K. Geim and I.V Grigorieva",
year = "2013",
doi = "10.1038/ncomms3010",
language = "English",
volume = "4",
pages = "1--6",
journal = "Nature Communications",
issn = "2041-1723",

}

RIS - Download

TY - JOUR

T1 - Dual origin of defect magnetism in graphene and its reversible switching by molecular doping

AU - Nair, R.R.

AU - Tsai, I.-L.

AU - Sepioni, M.

AU - Lehtinen, O.

AU - Keinonen, J.

AU - Krasheninnikov, A.V.

AU - Castro Neto, A.H.

AU - Katsnelson, M.I.

AU - Geim, A.K.

AU - Grigorieva, I.V

PY - 2013

Y1 - 2013

N2 - Control of magnetism by applied voltage is desirable for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and attracts interest because of its weak spin–orbit interaction, the ability to control electronic properties by the electric field effect and the possibility to introduce paramagnetic centres such as vacancies and adatoms. Here we show that the magnetism of adatoms in graphene is itinerant and can be controlled by doping, so that magnetic moments are switched on and off. The much-discussed vacancy magnetism is found to have a dual origin, with two approximately equal contributions; one from itinerant magnetism and the other from dangling bonds. Our work suggests that graphene’s spin transport can be controlled by the field effect, similar to its electronic and optical properties, and that spin diffusion can be significantly enhanced above a certain carrier density.

AB - Control of magnetism by applied voltage is desirable for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and attracts interest because of its weak spin–orbit interaction, the ability to control electronic properties by the electric field effect and the possibility to introduce paramagnetic centres such as vacancies and adatoms. Here we show that the magnetism of adatoms in graphene is itinerant and can be controlled by doping, so that magnetic moments are switched on and off. The much-discussed vacancy magnetism is found to have a dual origin, with two approximately equal contributions; one from itinerant magnetism and the other from dangling bonds. Our work suggests that graphene’s spin transport can be controlled by the field effect, similar to its electronic and optical properties, and that spin diffusion can be significantly enhanced above a certain carrier density.

KW - graphene

KW - graphene

KW - graphene

UR - http://www.nature.com/ncomms/2013/130612/ncomms3010/full/ncomms3010.html

U2 - 10.1038/ncomms3010

DO - 10.1038/ncomms3010

M3 - Article

VL - 4

SP - 1

EP - 6

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

M1 - 2010

ER -

ID: 962619