Dry Etching Process Development for Submicron and Nanometer Semiconductor

Research output: Working paper › Professional

Original language	English
Place of Publication	Espoo
Pages	26
Publication status	Published - 1993
MoE publication type	D4 Published development or research report or study

Keywords

@techreport{297a98a0b8af48e7af6220f645c8004e,

title = "Dry Etching Process Development for Submicron and Nanometer Semiconductor",

keywords = "dry etching, nanometer devices, dry etching, nanometer devices, dry etching, nanometer devices",

author = "V. Stepanov",

year = "1993",

language = "English",

series = "Reports in Electron Physics",

publisher = "TKK",

number = "1993/6",

pages = "26",

type = "WorkingPaper",

institution = "TKK",

}

TY - UNPB

T1 - Dry Etching Process Development for Submicron and Nanometer Semiconductor

AU - Stepanov, V.

PY - 1993

Y1 - 1993

KW - dry etching

KW - nanometer devices

KW - dry etching

KW - nanometer devices

KW - dry etching

KW - nanometer devices

M3 - Working paper

T3 - Reports in Electron Physics

SP - 26

BT - Dry Etching Process Development for Submicron and Nanometer Semiconductor

CY - Espoo

ER -