Doping-induced strain in N-doped 4H-SiC crystals

H. Jacobson, J. Birch, C. Hallin, A. Henry, R. Yakimova, T. Tuomi, E. Janzén, U. Lindefelt

    Research output: Contribution to journalArticleScientificpeer-review

    Original languageEnglish
    Pages (from-to)3689-3691
    JournalApplied Physics Letters
    Issue number82
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed

    Keywords

    • silicon carbide
    • strain
    • synchrotron x-ray topography

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