Doping and carrier transport in Ga1−3xIn3xNxAs1−x alloys

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Doping and carrier transport in Ga1−3xIn3xNxAs1−x alloys. / Li, W.; Pessa, M.; Toivonen, J.; Lipsanen, H.

In: Physical Review B, Vol. 64, No. 11, 113308, 29.08.2001, p. 1-3.

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Li, W. ; Pessa, M. ; Toivonen, J. ; Lipsanen, H. / Doping and carrier transport in Ga1−3xIn3xNxAs1−x alloys. In: Physical Review B. 2001 ; Vol. 64, No. 11. pp. 1-3.

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@article{691a75ffcac649f196aa4d97cdee6a19,
title = "Doping and carrier transport in Ga1−3xIn3xNxAs1−x alloys",
abstract = "Si- and Be-doped Ga1−3xIn3xNxAs1−x(0<~x<~3{\%}) layers are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. The carrier concentration and mobility are observed to decrease substantially with increasing nitrogen content in both p- and n-type GaInNAs films. After rapid thermal annealing at 750 °C, the Be dopants are almost fully activated in p-type material; yet only a small fraction of the Si dopants are activated in n-type GaInNAs films. At low temperature a broad photoluminescence band centered at 1.041 eV (about 120 meV below the band gap) is observed in n-type GaInNAs, which suggests the possible compensating centers present in Si-doped GaInNAs.",
keywords = "GaInNAs alloys, transport properties, GaInNAs alloys, transport properties, GaInNAs alloys, transport properties",
author = "W. Li and M. Pessa and J. Toivonen and H. Lipsanen",
year = "2001",
month = "8",
day = "29",
doi = "10.1103/PhysRevB.64.113308",
language = "English",
volume = "64",
pages = "1--3",
journal = "Physical Review B (Condensed Matter and Materials Physics)",
issn = "2469-9950",
publisher = "American Physical Society",
number = "11",

}

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TY - JOUR

T1 - Doping and carrier transport in Ga1−3xIn3xNxAs1−x alloys

AU - Li, W.

AU - Pessa, M.

AU - Toivonen, J.

AU - Lipsanen, H.

PY - 2001/8/29

Y1 - 2001/8/29

N2 - Si- and Be-doped Ga1−3xIn3xNxAs1−x(0<~x<~3%) layers are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. The carrier concentration and mobility are observed to decrease substantially with increasing nitrogen content in both p- and n-type GaInNAs films. After rapid thermal annealing at 750 °C, the Be dopants are almost fully activated in p-type material; yet only a small fraction of the Si dopants are activated in n-type GaInNAs films. At low temperature a broad photoluminescence band centered at 1.041 eV (about 120 meV below the band gap) is observed in n-type GaInNAs, which suggests the possible compensating centers present in Si-doped GaInNAs.

AB - Si- and Be-doped Ga1−3xIn3xNxAs1−x(0<~x<~3%) layers are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. The carrier concentration and mobility are observed to decrease substantially with increasing nitrogen content in both p- and n-type GaInNAs films. After rapid thermal annealing at 750 °C, the Be dopants are almost fully activated in p-type material; yet only a small fraction of the Si dopants are activated in n-type GaInNAs films. At low temperature a broad photoluminescence band centered at 1.041 eV (about 120 meV below the band gap) is observed in n-type GaInNAs, which suggests the possible compensating centers present in Si-doped GaInNAs.

KW - GaInNAs alloys

KW - transport properties

KW - GaInNAs alloys

KW - transport properties

KW - GaInNAs alloys

KW - transport properties

U2 - 10.1103/PhysRevB.64.113308

DO - 10.1103/PhysRevB.64.113308

M3 - Article

VL - 64

SP - 1

EP - 3

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 2469-9950

IS - 11

M1 - 113308

ER -

ID: 4146774