Doping and carrier transport in Ga1−3xIn3xNxAs1−x alloys

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Researchers

Research units

  • Tampere University of Technology

Abstract

Si- and Be-doped Ga1−3xIn3xNxAs1−x(0<~x<~3%) layers are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. The carrier concentration and mobility are observed to decrease substantially with increasing nitrogen content in both p- and n-type GaInNAs films. After rapid thermal annealing at 750 °C, the Be dopants are almost fully activated in p-type material; yet only a small fraction of the Si dopants are activated in n-type GaInNAs films. At low temperature a broad photoluminescence band centered at 1.041 eV (about 120 meV below the band gap) is observed in n-type GaInNAs, which suggests the possible compensating centers present in Si-doped GaInNAs.

Details

Original languageEnglish
Article number113308
Pages (from-to)1-3
Number of pages3
JournalPhysical Review B
Volume64
Issue number11
Publication statusPublished - 29 Aug 2001
MoE publication typeA1 Journal article-refereed

    Research areas

  • GaInNAs alloys, transport properties

ID: 4146774