Donor levels and the microscopic structure of DX center in n-type Si-doped Al_xGa_0.51-xIn_0.49P grown by molecular-beam epitaxy

J. Mäkinen, T. Laine, J. Partanen, K. Saarinen, P. Hautojärvi, K. Tappura, T. Hakkarainen, H. Asonen, M. Pessa, J.P. Kauppinen, K. Vänttinen, M.A. Paalanen, J. Likonen

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)
Original languageEnglish
Pages (from-to)7851
JournalPhysical Review B
Volume53
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

Keywords

  • molecular-beam epitaxy
  • semiconductors

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