Do arsenic interstitials really exist in As-rich GaAs?

T.E.M. Staab, Risto Nieminen, J. Gebauer, R. Krause-Rehberg, M. Luysberg, M. Haugk, Th. Frauenheim

Research output: Contribution to journalArticleScientificpeer-review

33 Citations (Scopus)
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Abstract

A self-consistent-charge density-functional based tight binding method was used to investigate the lattice distortion caused by point defects. This method is capable of treating large supercells with 512 atoms and allowed the comparison to study defect concentrations. The results showed that the incorporation of As antisites led to expansive lattice distortion. The displacement of the As lattice atoms neighboring the antisite was observed as a result of increase in As-As bonding.

Original languageEnglish
Article number045504
Pages (from-to)1-4
Number of pages4
JournalPhysical Review Letters
Volume87
Issue number4
DOIs
Publication statusPublished - 23 Jul 2001
MoE publication typeA1 Journal article-refereed

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