Divacancy and resistivity profiles in n-type Si implanted with 1.15-MeV protons

H. Kauppinen; C. Corbel; K. Skog; K. Saarinen; T. Laine; P. Hautojärvi; P. Desgardin; N. Ntsoenzok

Divacancy and resistivity profiles in n-type Si implanted with 1.15-MeV protons

H. Kauppinen, C. Corbel, K. Skog, K. Saarinen, T. Laine, P. Hautojärvi, P. Desgardin, N. Ntsoenzok

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

47 Citations (Scopus)

Original language	English
Pages (from-to)	9598
Journal	Physical Review B
Volume	55
Publication status	Published - 1997
MoE publication type	A1 Journal article-refereed

Keywords

point defects
silicon

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@article{770cd0ca14094e10bdd4cbb108974f1c,

title = "Divacancy and resistivity profiles in n-type Si implanted with 1.15-MeV protons",

keywords = "point defects, silicon, point defects, silicon, point defects, silicon",

author = "H. Kauppinen and C. Corbel and K. Skog and K. Saarinen and T. Laine and P. Hautoj{\"a}rvi and P. Desgardin and N. Ntsoenzok",

year = "1997",

language = "English",

volume = "55",

pages = "9598",

journal = "Physical Review B",

issn = "2469-9969",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Divacancy and resistivity profiles in n-type Si implanted with 1.15-MeV protons

AU - Kauppinen, H.

AU - Corbel, C.

AU - Skog, K.

AU - Saarinen, K.

AU - Laine, T.

AU - Hautojärvi, P.

AU - Desgardin, P.

AU - Ntsoenzok, N.

PY - 1997

Y1 - 1997

KW - point defects

KW - silicon

KW - point defects

KW - silicon

KW - point defects

KW - silicon

M3 - Article

SN - 2469-9969

SN - 1550-235X

SN - 1095-3795

VL - 55

SP - 9598

JO - Physical Review B

JF - Physical Review B

ER -