Divacancy and resistivity profiles in n-type Si implanted with 1.15-MeV protons

H. Kauppinen, C. Corbel, K. Skog, K. Saarinen, T. Laine, P. Hautojärvi, P. Desgardin, N. Ntsoenzok

Research output: Contribution to journalArticleScientificpeer-review

46 Citations (Scopus)
Original languageEnglish
Pages (from-to)9598
JournalPhysical Review B
Volume55
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

Keywords

  • point defects
  • silicon

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