Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • CRTSE Research Center in Semiconductor Technology for the Energetic
  • Universite Ferhat Abbas

Abstract

This paper reports the results of a systematic study on the kinetics of dissociation and formation of iron-boron (FeB) pairs in boron-doped Czochralski silicon after phosphorus implantation gettering of iron at different temperatures. The aim of this study is threefold: (i) investigation of the dissociation kinetics of the FeB pairs by a standardized illumination as a function of the iron concentration after gettering process (ii) study of the kinetics of their association, and (iii) extraction of the characteristic parameters of these two phenomena for gettered samples, in particular the effective time constants of dissociation and association as well as the constant of material, which describes the dissociation rate well in the absence of other recombination channels. This article is protected by copyright. All rights reserved.

Details

Original languageEnglish
Article number1900253
Number of pages19
JournalPHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE
Publication statusAccepted/In press - 25 Jul 2019
MoE publication typeA1 Journal article-refereed

    Research areas

  • dissociation-association, gettering, iron-boron pairs, phosphorus implantation, silicon

ID: 35820736