Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering

Nabil Khelifati, Hannu S. Laine, Ville Vähänissi, Hele Savin, Fatima Zohra Bouamama, Djoudi Bouhafs

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Abstract

This paper reports the results of a systematic study on the kinetics of dissociation and formation of iron-boron (FeB) pairs in boron-doped Czochralski silicon after phosphorus implantation gettering of iron at different temperatures. The aim of this study is threefold: (i) investigation of the dissociation kinetics of the FeB pairs by a standardized illumination as a function of the iron concentration after gettering process (ii) study of the kinetics of their association, and (iii) extraction of the characteristic parameters of these two phenomena for gettered samples, in particular the effective time constants of dissociation and association as well as the constant of material, which describes the dissociation rate well in the absence of other recombination channels. This article is protected by copyright. All rights reserved.
Original languageEnglish
Article number1900253
Number of pages19
JournalPHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE
Volume216
Issue number17
DOIs
Publication statusPublished - Sep 2019
MoE publication typeA1 Journal article-refereed

Keywords

  • dissociation-association
  • gettering
  • iron-boron pairs
  • phosphorus implantation
  • silicon

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