Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy

Research output: Contribution to journalArticle

Researchers

  • A. Säynätjoki
  • A. Lankinen
  • T.O. Tuomi
  • P.J. McNally
  • A. Danilewsky
  • Y. Zhilyaev
  • L. Fedorov

Research units

Details

Original languageEnglish
Pages (from-to)149-154
JournalJournal of Materials Science: Materials in Electronics
Volume19
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

ID: 3404330