Original language | English |
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Pages (from-to) | 149-154 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 19 |
Publication status | Published - 2008 |
MoE publication type | A1 Journal article-refereed |
Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy
A. Säynätjoki, A. Lankinen, T.O. Tuomi, P.J. McNally, A. Danilewsky, Y. Zhilyaev, L. Fedorov
Research output: Contribution to journal › Article › Scientific › peer-review
1
Citation
(Scopus)