Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy

A. Säynätjoki, A. Lankinen, T.O. Tuomi, P.J. McNally, A. Danilewsky, Y. Zhilyaev, L. Fedorov

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)
    Original languageEnglish
    Pages (from-to)149-154
    JournalJournal of Materials Science: Materials in Electronics
    Publication statusPublished - 2008
    MoE publication typeA1 Journal article-refereed

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