Dislocations in GaAs grown by vapour pressure controlled Czochralski technique

T. Tuomi, L. Knuuttila, J. Riikonen, P. Rudolph, M. Neubert, P.J. McNally, W. Chen, J. Kanatharana

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationHampuri
    Pages839-840
    Publication statusPublished - 2002
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameHASYLAB-DESY Annual Report 2001, Part I

    Keywords

    • semiconductors
    • synchrotron x-ray topography

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